CMOS Development Intern

4 weeks ago

Boise, Idaho, United States Micron Technology Full time
Job Summary

We are seeking a highly motivated and detail-oriented intern to join our NAND CMOS team. As an intern, you will have the opportunity to work on evaluation and read out of test structures, identify improved design rules, and contribute to the development of new test structures.

Key Responsibilities:

  • Perform device characterization measurements, such as I-V curves and C-V characterization, on various types of transistors or test circuits.
  • Conduct stress tests on CMOS devices, including hot-carrier and gate oxide reliability tests.
  • Compare different test structures for key device parameters to find optimum layout and process conditions.
  • Compile results in comprehensive reports and present findings to the team.
  • Assist in devising new test structures for future test chips.

Requirements:

  • Knowledge of device physics and materials used in semiconductor devices.
  • Bachelor's degree in Electrical Engineering or Solid State Physics.
  • Preferred: background in CMOS transistor technology (45nm ...FINFet technology).
  • Interest in CMOS device simulation and technology, coding for characterization setup, data analysis, and mining.
  • Skills: MS Office, JMP, Python, Cadence, Sentaurus TCAD.

Education Requirements:

  • Pursuing a Master's or Ph.D. in Electrical Engineering, Physics, or Materials Science.

Micron Technology is a world leader in innovating memory and storage solutions. We are dedicated to your personal wellbeing and professional growth. Our benefits include a choice of medical, dental, and vision plans, paid time-off, and paid holidays. We are an equal opportunity workplace and an affirmative action employer.

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