Senior Microelectronic Semiconductor Device Engineer
4 weeks ago
We are seeking a highly skilled Microelectronic Semiconductor Device Engineer to join our team at Northrop Grumman Microelectronics Center in Redondo Beach, CA.
Key Responsibilities:- Lead the development and maturation of novel III-V semiconductor technologies, including advanced GaN HEMT technology nodes.
- Advance new technologies from early research and development through production.
- Design and simulate mmW transistors, develop experimental devices, and perform root cause analysis and RF device characterization.
- Bachelor's degree in a STEM discipline from an accredited university and 5 years of engineering experience in an aerospace environment, or Master's degree in STEM and 3 years of engineering experience in an aerospace environment, or Ph.D. degree in STEM from an accredited institution.
- Experience with semiconductor device processing and expertise in semiconductor device physics.
- Proficiency in Design-of-Experiments methodologies and ability to obtain and maintain a DoD Secret clearance.
- US Citizenship is required.
- Ph.D. degree in Electrical Engineering, Chemical Engineering, or Physics.
- Experience with MMIC design and fabrication, direct experience with GaN transistor development, and demonstrated track record of applying scientific principles to advance device performance.
- Experience with technology maturation and transition from R&D to manufacturing, excellent communication and interpersonal skills, and ability to prioritize and perform on multiple tasks simultaneously.
Northrop Grumman is committed to hiring and retaining a diverse workforce and is an Equal Opportunity/Affirmative Action Employer. We offer a competitive salary range of $102,400 - $153,600 and a variety of benefits, including health insurance coverage, life and disability insurance, savings plan, Company paid holidays and paid time off (PTO) for vacation and/or personal business.
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