Sr Principal GaN Modeling Engineer

Select how often (in days) to receive an alert: Sr Principal GaN Modeling Engineer Experience Level: Professional Job Type: Regular Location: Apopka, FL, US, 32703 Requisition ID: 9646 Qorvo (Nasdaq: QRVO) supplies innovative semiconductor solutions that make a better world possible. We combine product and technology leadership, systems-level expertise and global manufacturing scale to quickly solve our customers\' most complex technical challenges. Qorvo serves multiple high-growth segments of large global markets, including consumer electronics, smart home/IoT, automotive, EVs, battery-powered appliances, network infrastructure, healthcare and aerospace/defense. Visit to learn how our innovative team is helping connect, protect and power our planet. Sr Principal Modeling Engineer We are seeking a highly skilled and experienced RF GaN Transistor Modeling Engineer to join our Modeling Team. The successful candidate will be responsible for the analysis, and development of accurate and predictive compact and behavioral models for Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) used in high-frequency and high-power applications. This role involves close collaboration with process engineers, circuit designers, and product development teams to ensure our GaN technologies meet the highest performance and reliability standards for next-generation wireless communication systems. Key Responsibilities Device Characterization: Define on-wafer and packaged device characterization plans, including DC, capacitance-voltage (CV), small-signal RF (S-parameters), noise, and large-signal measurements (e.g., load-pull, pulsed I-V). Model Development & Extraction: Develop and refine accurate, physics-based compact models for GaN HEMTs using industry-standard modeling tools and techniques (e.g., MVSG, ASM-HEMT, Angelov). Simulation & Validation: Utilize TCAD and circuit simulation tools (e.g., Keysight ADS, Cadence AWR/Spectre, Synopsys, Silvaco) to perform simulations, analyze data, and validate model accuracy against hardware measurements. PDK Development: Collaborate with the PDK Team and provide support for both internal and external customers. Cross-Functional Collaboration: Work closely with process engineers to link device performance to fabrication parameters, with reliability engineers to understand long-term device stability, and with circuit designers to ensure models meet their design requirements. Analysis & Troubleshooting: Conduct in-depth analysis of test data, identify device or measurement issues, and propose solutions for performance and yield improvement. Documentation & Reporting: Prepare detailed technical reports, documentation, and application notes for model usage and limitations. Innovation & Mentorship: Research and develop novel modeling solutions and characterization techniques, and mentor junior engineers or team members. Required Qualifications Education: Master\'s or Ph.D. in Electrical Engineering, Applied Physics, or a related field with a focus on semiconductor devices. Experience: 15+ years of experience in semiconductor device characterization and modeling, specifically with RF GaN HEMT technologies. Technical Skills: Deep theoretical and practical understanding of GaN device physics and materials science. Proficiency with RF characterization equipment (network analyzers, spectrum analyzers, load-pull systems, probe stations). Expertise in industry-standard RF simulation and modeling tools (Keysight ADS, Cadence AWR, TCAD tools, etc.). Strong programming and data analysis skills (e.g., Python, MATLAB, C++) for automation and data interpretation. We are an Equal Employment Opportunity (EEO) employer and welcome all qualified applicants. Applicants will receive fair and impartial consideration without regard to any characteristics protected by applicable law, including race, color, religion, sex (as defined by law), national origin, age, military or veteran status, genetic information, or disability. #J-18808-Ljbffr