Senior Device and Process Engineer of GaN

3 weeks ago

San Jose, California, United States Renesas Full time

Job Description:

An experienced researcher in the area of compound semiconductor is responsible for the development of new and innovative epitaxy designs in GaN on Silicon process technology to achieve best-in-class linearity and power-added efficiency HEMT devices for PA design.

The candidate will be responsible for collaboration with foundry and academic partners, devising new process flows using TCAD tools, designing and laying out appropriate test structures, and testchip tape out to candidate fabs.

The candidate will also be responsible for characterizing and measuring the testchip to verify the targeted performance improvement and publishing reports and presenting the results to the team.

Upon achieving the performance target, the candidate will be responsible for developing a compact model and implementing it in PDK for design teams to use for the design of final products.

Responsibilities:

  • Literature search with emphasis on the area of GaN devices on Silicon
  • Perform TCAD simulation using Sentaurus tools from Synopsis to design GaN epitaxy experiments to enhance HEMT performance and reliability
  • Test structure design and layout and testchip tape out
  • Perform device characterization using DC, CV, and RF characterization
  • Perform CW and pulsed IV, S-parameter, and Load-Pull (LP) measurement
  • Perform device-level circuit simulation using Cadence and ADS tools
  • Compact model development using CMC standard model for GaN devices

Qualifications:

  • MS or PhD in EE, Physics, or Material Science with research focus on GaN epitaxy, GaN HEMT, or GaAs pHEMT/HBT
  • Good understanding of high-bandgap GaN or GaAs device physics and fabrication process
  • Good understanding of device reliability issues in III-V devices
  • Good understanding of GaN or GaAs epitaxy growth process
  • TCAD simulation of high-bandgap GaN or GaAs devices
  • Experience with measurement techniques such as DC and pulsed IV, CV, CW and pulsed S-parameter as well as load-pull characterization
  • Good written/oral communication and project management skills

About Renesas:

Renesas is one of the top global semiconductor companies in the world. We strive to develop a safer, healthier, greener, and smarter world, and our goal is to make every endpoint intelligent by offering product solutions in the automotive, industrial, infrastructure, and IoT markets.

We are a key supplier to the world's leading manufacturers of electronics you rely on every day; you may not see our products, but they are all around you.

Renesas employs roughly 21,000 people in more than 30 countries worldwide.

As a global team, our employees actively embody the Renesas Culture, our guiding principles based on five key elements: Transparent, Agile, Global, Innovative, and Entrepreneurial.

Renesas believes in, and has a commitment to, diversity and inclusion, with initiatives and a leadership team dedicated to its resources and values.

At Renesas, we want to build a sustainable future where technology helps make our lives easier. Join us and build your future by being part of what's next in electronics and the world.

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