RFIC/MMIC GaAs/GaN Power Amplifier Designer
3 weeks ago
Falcomm was founded with a mission to bring semiconductor innovation to the real world. Today, Falcomm is actively developing new semiconductor technologies for customers to provide the most energy efficient power amplifier products in the world. Falcomm is seeking a highly motivated RF/mm-Wave power amplifier designer skilled in designing in GaN processes on industry standard EDA tools. An ideal candidate is able to learn quickly, is highly detail-oriented, takes pride in the quality of their work, and wants to make a real impact in creating ultra energy efficient power amplifier technologies for the wireless communication market.
RFIC/MMIC GaAs/GaN Power Amplifier Designer
RESPONSIBILITIES:
- Lead the research and development of a new ultra-efficient MMIC power amplifier product line in state-of-the-art GaAs, and GaN processes
- Derive specifications for the MMIC subsystems and circuits
- Design the transistors, MMICs, passive devices and other on-chip matching networks, using state-of-the-art simulation tools.
- Model package and external parasitic components
- Evaluate and characterize prototypes of the design
- Assist in the development of automated test lab equipment for lab measurements
- Work with manufacturing engineers on production testing and qualification of the components and systems
BASIC QUALIFICATIONS:
- Must have proven mmWave power amplifier design experience
- Must be an efficient user of Cadence (Virtuoso)/Agilent ADS / Mentor tools / HFSS
- Good knowledge of IC design, simulation, layout, and system level design
- Master’s degree in electrical engineering or computer engineering
- Passionate about RF/microwave integrated circuits
- Excited about innovation
- Desire to learn
PREFERRED SKILLS AND EXPERIENCE:
- PhD/Master/bachelor’s in electrical engineering with an emphasis in RF/microwave integrated circuits design
- Experience using simulation tools such as Keysight PathWave Designs Suite (ADS, SystemVue, GoldenGate, Momentum), Spectre, HFSS
- Strong circuit design skills, and experience performing analysis and simulation of both linear and non-linear circuits for power amplifiers and other related RF circuit blocks
- Knowledge of digital communication systems, spread spectrum, single and multi-carrier techniques and modulation types such as QPSK, APSK and QAM
- Knowledge of RF transceiver architectures
- RF/microwave design in the GSM band, Ku-band, K-band and Ka-band frequency range
- Familiarity with radio related test equipment such as spectrum analyzers, vector signal analyzers, vector signal generator, network analyzers
- Experience characterizing radio performance in microwave frequencies
REQUIREMENTS:
- Falcomm is an Equal Opportunity Employer; employment with Falcomm is governed on the basis of merit, competence and qualifications and will not be influenced in any manner by race, color, religion, gender, national origin/ethnicity, veteran status, disability status, age, sexual orientation, gender identity, marital status, mental or physical disability or any other legally protected status.
- Applicants wishing to view a copy of Falcomm’s Affirmative Action Plan for veterans and individuals with disabilities, or applicants requiring reasonable accommodation to the application/interview process should notify Falcomm.
- To conform to U.S. Government export regulations, including the International Traffic in Arms Regulations (ITAR) you must be a U.S. citizen, lawful permanent resident of the U.S., protected individual as defined by 8 U.S.C. 1324b(a)(3), or eligible to obtain the required authorizations from the U.S. Department of State.
LOCATION:
- On-site required - Atlanta, GA.
BENEFITS:
Stock option plan
- Medical, dental, and vision
- Paid time off
- Family leave
-
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