Director of MOCVD GaN Engineering

Found in: Appcast Linkedin GBL C2 - 2 weeks ago


Sunnyvale, United States Avicena Tech Full time

Role:

  • Manage the MOCVD GaN epitaxy/characterization group within the R&D organization.
  • Provide very close collaboration with R&D LED Wafer Fab Process Engineering team.
  • Device characterization, design of experiments, epitaxy design.
  • Apply technical leadership and domain expertise in Gallium Nitride (GaN).
  • Define strategies and technology applications.
  • Leverage cross-functional collaboration across the areas of semiconductor process development, modeling, simulation, and characterization.


Requirements:

  • MS or PhD in Materials Science and Engineering, Electrical Engineering, or Applied Physics.
  • 10+ years of relevant industry experience.
  • Very strong understanding of semiconductor device physics.
  • Very strong understanding of characterization techniques (SIMS, XRD, SEM, TEM, etc.).
  • Good theoretical knowledge of light extraction techniques.
  • Comfortable in or about an R&D clean room environment.
  • Strong familiarity with semiconductor wafer fabrication processes (photolithography, thin film metal deposition, dielectrics, wet/dry etching, etc.)
  • Excellent interpersonal skills, working with or managing peers, engineers, and technicians.
  • Ability to present and communicate complex scientific findings and drive equally complex engineering solutions.
  • Ability to overcome unforeseen challenges in a dynamic work environment with shifting timelines.



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